At the beginning of this year, Samsung first demonstrated a solid-state drive based on Z-NAND memory. The model with a capacity of 800 GB was characterized by a read and write performance of 750,000 and 160,000 IOPS, respectively, and a write speed of 3.2 GB / s.

According to new data, the production of Z-NAND memory and corresponding controllers should begin already this year. Samsung has already started discussing options for deliveries with customers and established a test production.

In addition, it became known that the Z-NAND memory is of the SLC type, that is, it is only able to store one bit of data in each cell. In theory, this should ensure good reliability of such memory, and the advantages in terms of performance and speed are visible in the example of the drive shown in March.

It should be noted that the source says the small capacity of Z-NAND chips, although, judging by early data, the first in the market should appear SSD with a volume of 1 to 4 TB.