Toshiba has announced the world's most capacious flash memory chip. It is built on technology BiCS (Bit-Cost-Scaling), able to store in each cell four bits (QLC), due to which it is possible to increase the volume in comparison with the memory TLC NAND.

In the presented prototype, 64 layers of QLC NAND cells with a density of 768 Gb (96 GB). By combining 16 such crystals in one case, a chip with a record volume of 1.5 TB.

Public presentation of such solutions will be held at the Flash Memory Summit, which will be held in Santa Clara (California, USA) from August 7 to 10,.

It should be noted that chips 3D QLC NAND are cheap compared to TLC and MLC, but they support a smaller number of rewrites than the more expensive analogues. In this regard, it is expected that the QLC memory will find application in the most budget solid-state storage devices or large-scale devices used, for example, for archive storage of information.

Toshiba has already started trial deliveries of 64-layer memory of 3D QLC NAND of 768 Gbit density for SSD-devices. Now the company serially produces 256-gigabit similar solutions.