Samsung is increasing the output of the fastest DRAM memory - 8 GB HBM2 chips

21 July 2017, 18:51 | Technologies
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Samsung Electronics has announced an increase in the production of memory chips HBM2 (High Bandwidth Memory-2) of 8 GB. According to the manufacturer, it seeks to meet the growing need for this memory "in a wide range of applications," including artificial intelligence, supercomputer computing, graphics solutions, network systems and corporate servers.

8 GB HBM2 chips manufactured by Samsung demonstrate high performance, reliability and energy efficiency. Such a chip consists of eight memory chips and a lower buffer crystal. Each memory chip has more than 5,000 TSV contacts for an interlayer connection, that is, in a single 8 GB Samsung HBM2 chip, there are more than 40,000 connections.

This allows for greater bandwidth and reliability, because the data is automatically forwarded to other connections if a transmission delay is detected. The bandwidth of the HBM2 is 256 GB / s. For comparison: the GDDR5 chip has a capacity of 32 GB / s. The manufacturer also notes the availability of protection against overheating.

In the company Samsung expect that in the first half of next year, HBM2 chips of 8 GB will account for more than half of all HBM2 chips produced at its facilities.




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