The company Samsung in the near future intends to bring to market a new non-volatile memory MRAM. Over this memory, the Korean giant worked together with IBM.

According to the companies, MRAM is 100 000 times faster than NAND memory and yet has no limit on the number of overwrites. MRAM is a magnetoresistive random access memory, which, despite the name, can be used instead of NAND memory.

More about the new memory should be told during the Samsung Foundry Forum Event, which will be held on May 24.

They can also present the first products using MRAM. For example, the source says that one of the divisions of Samsung already has a prototype of a certain one-chip system with integrated memory MRAM.

As for the commercialization of technology, the first customer of Samsung was NXP. Single-chip systems of the family i. MX, intended for devices of the Internet segment of things, and also some microcontrollers NXP already with the next generation will receive the integrated memory MRAM.