From the second half of 2017 in the world will significantly increase the production of flash memory 3D NAND with a multilevel structure. It is also expected that in the IV quarter chips of this type will outstrip the 2D NAND planar flash memory in terms of supplies, DigiTimes reports with reference to industry sources.

Leading chipmakers, including Samsung Electronics, Micron Technology and Toshiba, are already producing 64-layer flash memory. Moreover, SK Hynix recently introduced the industry's first 72-layer 3D NAND flash.

Volumes of production of these products are unstable due to technological difficulties, but gradually problems are being solved, and vendors are increasing the production of 3D NAND, while reducing the output of 2D NAND. Because of this transition in the market, there was a shortage of flash memory chips, and the deficit, in turn, triggered a price increase. However, sources believe that in the second half of 2017 the situation will begin to improve.

In particular, Samsung, which has already sufficiently stabilized the production of 3D NAND, will significantly increase the production of these products in the coming months - in May-June.

In addition, in July 2017 should earn a new enterprise Samsung in Pyongtec, which will further increase the capacity to produce 3D NAND.

Progress is demonstrated by other chipmakers. According to sources, Micron in the current quarter will launch production of 64-layer flash memory and in the second half of the year will begin mass shipments of these chips. As a result of all efforts by the end of the year, 3D NAND should become the most popular type of flash memory.